M. Yang, J. Schaub, et al.
VLSI Technology 2003
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
M. Yang, J. Schaub, et al.
VLSI Technology 2003
B. Yang, J. Schaub, et al.
LEOS 2002
H. Wu, J. Tierno, et al.
ISSCC 2003
J. Schaub, S.M. Csutak, et al.
LEOS 2002