Conference paper
Germanium-on-insulator photodetectors
S.J. Koester, G. Dehlinger, et al.
GFP 2005
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
S.J. Koester, G. Dehlinger, et al.
GFP 2005
S.M. Csutak, J. Schaub, et al.
Journal of Lightwave Technology
G. Dehlinger, S.J. Koester, et al.
IEEE Photonics Technology Letters
S.M. Csutak, J. Schaub, et al.
IEEE Photonics Technology Letters