S.M. Csutak, J. Schaub, et al.
IEE Proceedings: Optoelectronics
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
S.M. Csutak, J. Schaub, et al.
IEE Proceedings: Optoelectronics
S.J. Koester, L. Schares, et al.
ECS Meeting 2006
J. Schaub, D. Kuchta, et al.
OFC 2001
J. Schaub, S.M. Csutak, et al.
LEOS 2002