Conference paper
High speed lateral trench detectors with a junction substrate
Qiqing Ouyang, J. Schaub
Device Research Conference 2003
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
Qiqing Ouyang, J. Schaub
Device Research Conference 2003
S.M. Csutak, J. Schaub, et al.
IEE Proceedings: Optoelectronics
B. Yang, J. Schaub, et al.
LEOS 2002
Jente B. Kuang, J. Schaub, et al.
CICC 2010