A privacy-protecting coupon system
Liqun Chen, Matthias Enzmann, et al.
FC 2005
We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude A and the sample resistance R. By contacting semiconducting tubes with different metal electrodes we are able to show that a small A/R value by itself is no indication of a suitable metal/tube combination for logic applications. We discuss how current in a nanotube transistor is determined by the injection of carriers at the electrode/nanotube interface, while at the same time excess noise is related to the number of carriers inside the nanotube channel. In addition, we demonstrate a substantial reduction in noise amplitude for a tube transistor with multiple carbon nanotubes in parallel. © 2007 IEEE.
Liqun Chen, Matthias Enzmann, et al.
FC 2005
Indranil R. Bardhan, Sugato Bagchi, et al.
JMIS
Raymond Wu, Jie Lu
ITA Conference 2007
Xiaozhu Kang, Hui Zhang, et al.
ICWS 2008