Conference paper
40-Gb/s circuits built from a 120-GHz f T SiGe technology
Greg Freeman, Mounir Meghelli, et al.
IEEE Journal of Solid-State Circuits
A -3.3-V half-rate clock 4:1 multiplexer implemented in a 210-GHz f T 0.13-μm SiGe-bipolar technology and operating up to 132 Gb/s is reported. Among many design challenges, the control of on-chop clock distribution was critical to achieve such a high data rate. At 100 Gb/s, the chip operates reliably down to -3.0-V supply voltage and up to 100°C chip temperature. The circuit consumes 1.45 W from a -3.3-V supply voltage and exhibits less than 340-fs rms jitter on the output data.
Greg Freeman, Mounir Meghelli, et al.
IEEE Journal of Solid-State Circuits
Zeynep Toprak-Deniz, Jonathan E. Proesel, et al.
ISSCC 2019
Daniel M. Kuchta, Mounir Meghelli, et al.
Networks 2022
Jae-Sung Rieh, Basanth Jagannathan, et al.
IEEE T-MTT