A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
A fully integrated 60 GHz transmitter in 130 nm BiCMOS SiGe technology for outdoor applications is presented. The transmitter covers the entire 57-66 GHz band supporting a record data rate of 16.2 Gbps at 6 dBm output power, 512 QAM with an EVM of -34 dB. The single ended saturated power, OP1dB, and OIP3 are above 18 dBm, 16 dBm and 23 dBm respectively. The transmitter meets the most stringent ETSI emission mask for point-to-point communication at class6LB, 500 MHz bandwidth with an output noise floor below -133 dBm/Hz. The area of the transmitter is 15 mm2 and it consumes 1.2 W.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Nadav Mazor, Benny Sheinman, et al.
IEEE MWCL
Sergi Abadal, Benny Sheinman, et al.
IEEE Micro