Sung Ho Kim, Oun-Ho Park, et al.
Small
We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1 K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-signal AC analysis. An average field polarization vector at each quantum dot is extracted via a post-processing step. We demonstrate functionality of this approach by simulation of a recently reported two-qubit device in the form of a 5-gate silicon FinFET. The impact of the number of holes in each quantum dot on the MW response E-field polarization direction is further investigated for this device. The framework is easily generalizable to study future multi-qubit large-scale systems.
Sung Ho Kim, Oun-Ho Park, et al.
Small
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME