A low-temperature firing thick film capacttor material based on lead iron niobate/tungstate

Abstract

The preparation of solid solution perovskite 70% Pb(Fe 1 2Nb 1 2)O3-30%Pb(Fe 2 3W 1 3)O3 is described for use as a thick film capacitor on ceramic chip carriers. The limited densification at the temperature range of interest (850 - 900°C) requires the addition of a sintering aid. It is shown that a small addition of PbO(7 vol.%) is sufficient to promote densification of this material and maintain a dielectric constant exceeding 4000 for a fired thick film. Other electrical and physical properties of this material are described. © 1984.