A patterned SOI by masked anneal for system-on-chip applications

Abstract

We present a method for fabricating pattern silicon-on-insulator (SOI) wafers that exploit internal thermal oxidation (ITOX) to control the BOX formation. We demonstrated the process by fabricating a pattern SOI having two different buried oxides (BOX) thickness. We also show that by using a very low oxygen dose the BOX can be quenched in the masked regions, while maintaining a continuous BOX in unmasked regions. Very low damage forms at the transition region from thick to thin BOX. Due to the oxygen diffusion the smallest patterned box feature we could obtain was limited to > 0.5 micron.