Single and dual wavelength exposure of photoresist
J. LaRue, C. Ting
Proceedings of SPIE 1989
The running solutions and I-V characteristic of an extended Josephson junction in a state near the ohmic regime are calculated by a perturbation method. Both the voltage-driven and current-driven cases are considered and the convergence of the perturbation procedure is proved. An integral representation of the first correction, in the I-V curve, to the ohmic regime-as well as its dependence on the external magnetic field-is given and evaluated numerically for various values of the junction parameters. © 1979.
J. LaRue, C. Ting
Proceedings of SPIE 1989
Charles Micchelli
Journal of Approximation Theory
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990