A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The running solutions and I-V characteristic of an extended Josephson junction in a state near the ohmic regime are calculated by a perturbation method. Both the voltage-driven and current-driven cases are considered and the convergence of the perturbation procedure is proved. An integral representation of the first correction, in the I-V curve, to the ohmic regime-as well as its dependence on the external magnetic field-is given and evaluated numerically for various values of the junction parameters. © 1979.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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