A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Two sets of E-band transceiver circuits in a superhetrodyne architecture covering the lower 71-76GHz and upper 81-86GHz bands were designed and fabricated in 0.13m SiGe technology. The measured upper band transmitter RF gain chain is 30dB with a saturated output power of 15.2dBm. The LNA exhibits more than 15dB gain. A frequency quadrupler was used to generate the LO signal in both transmitter and receiver enabling a single PLL design with reuse of 60GHz intermediate and baseband circuits. The measured value of quadrupler conversion gain is approximately 8dB, to our best knowledge the highest reported value for a SiGe frequency quadrupler. Measurements of fabricated critical circuits in conjunction with modifications performed to proven 60GHz transceiver components enables a complete E-band transceiver circuit solution covering the entire E-band frequency range. The paper will focus on the critical E-band building blocks. © 2011 IEEE.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Oded Katz, Dan A. Ramon, et al.
IEEE Transactions on VLSI Systems
Nadav Mazor, Benny Sheinman, et al.
IEEE MWCL