A SIMS-XPS study on silicon and germanium under O⁺₂ bombardment

Abstract

Using a combined SIMS-XPS system it is shown that the much lower secondary ion yield of Ge+ sputtered from germanium under 10 keV O+2 bombardment at normal incidence compared to the Si+ yield sputtered from silicon is due to the much smaller uptake of oxygen in germanium vs silicon. Data are also presented on the chemistry induced in b oth elements as a function of the angle of incidence of the O+2 beam. © 1986.