A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array

Benjamin G. Lee; Renato Rimolo-Donadio; Alexander V. Rylyakov; Jonathan E. Proesel; John F. Bulzacchelli; Christian Baks; Mounir Meghelli; Clint L. Schow; Anand Ramaswamy; Jonathan E. Roth; Jaehyuk Shin; Brian Koch; Daniel Sparacin; Greg Fish

doi:10.1364/ofc.2015.tu3g.3

OFC 2015

Conference paper

13 Mar 2015

A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array

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Abstract

A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.

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