T.N. Huynh, Anand Ramaswamy, et al.
Journal of Lightwave Technology
Conference paper
A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array
Abstract
A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.
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