Ellen J. Yoffa, David Adler
Physical Review B
Gd(3-x)vxS4 provides a convenient analog of a compensated semiconductor in which, for x0.3, the mobility edge can be tuned smoothly through the Fermi energy by the application of a magnetic field. The results of a search for a minimum metallic conductivity demonstrate that, down to T=6 mK, the metal-insulator transition is smooth. In the insulating regime, the temperature dependence of the conductivity was more consistent with the theory of mutual interactions than with the theory of pure localization. © 1984 The American Physical Society.
Ellen J. Yoffa, David Adler
Physical Review B
Michiel Sprik
Journal of Physics Condensed Matter
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Peter J. Price
Surface Science