Sung Ho Kim, Oun-Ho Park, et al.
Small
We present a new calculation of the absorption due to transitions of holes between neutral acceptors and the various valence-band sublevels in GaAs and GaP. The acceptor wave function was approximated by a previously suggested expression for ground-state wave functions appropriate to complicated band extrema. Numerical calculations of the absorption from intervalence-band transitions of free holes and neutral acceptors have been performed. Good agreement with experimental results is obtained. © 1973 The American Physical Society.
Sung Ho Kim, Oun-Ho Park, et al.
Small
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME