Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
We have measured angle-resolved inverse-photoemission spectra of GaP(110) along the Γ̄X̄ and Γ̄X̄́ symmetry direction. An unoccupied, surface-state band near the bottom of the conduction band exhibits a downward dispersion along Γ̄X̄ and appears to be quite flat along Γ̄X̄́. Its minimum energy is found at X̄ to be EF+0.9 eV. Combining this value with angle-resolved ultraviolet-photoemission results, we find a direct surface-state band gap of 3.4 eV, while optical data show a first surface-sensitive transition around 2.8 eV. © 1987 Elsevier Science Publishers B.V. (North-Holland Physics Publishing Division).
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Hiroshi Ito, Reinhold Schwalm
JES
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020