The DX centre
T.N. Morgan
Semiconductor Science and Technology
We have measured angle-resolved inverse-photoemission spectra of GaP(110) along the Γ̄X̄ and Γ̄X̄́ symmetry direction. An unoccupied, surface-state band near the bottom of the conduction band exhibits a downward dispersion along Γ̄X̄ and appears to be quite flat along Γ̄X̄́. Its minimum energy is found at X̄ to be EF+0.9 eV. Combining this value with angle-resolved ultraviolet-photoemission results, we find a direct surface-state band gap of 3.4 eV, while optical data show a first surface-sensitive transition around 2.8 eV. © 1987 Elsevier Science Publishers B.V. (North-Holland Physics Publishing Division).
T.N. Morgan
Semiconductor Science and Technology
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures