Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
We have measured angle-resolved inverse-photoemission spectra of GaP(110) along the Γ̄X̄ and Γ̄X̄́ symmetry direction. An unoccupied, surface-state band near the bottom of the conduction band exhibits a downward dispersion along Γ̄X̄ and appears to be quite flat along Γ̄X̄́. Its minimum energy is found at X̄ to be EF+0.9 eV. Combining this value with angle-resolved ultraviolet-photoemission results, we find a direct surface-state band gap of 3.4 eV, while optical data show a first surface-sensitive transition around 2.8 eV. © 1987 Elsevier Science Publishers B.V. (North-Holland Physics Publishing Division).
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science