K.N. Tu
Materials Science and Engineering: A
Angle-resolved photoemission measurements for GaAs(110) have been extended to hv= 100 eV. These results show that dominant emission peaks are due to direct transitions. Weaker one-dimensional density of states features sometimes observed are due to surface umklapp/secondary cone and lifetime effects. Accurate band dispersions {A figure is presented} for all four valence bands GaAs along the [110] direction are given using simple normal emission and off-normal emission methods. Electron and hole lifetimes are directly determined. © 1979.
K.N. Tu
Materials Science and Engineering: A
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989