U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Angle-resolved photoemission measurements for GaAs(110) have been extended to hv= 100 eV. These results show that dominant emission peaks are due to direct transitions. Weaker one-dimensional density of states features sometimes observed are due to surface umklapp/secondary cone and lifetime effects. Accurate band dispersions {A figure is presented} for all four valence bands GaAs along the [110] direction are given using simple normal emission and off-normal emission methods. Electron and hole lifetimes are directly determined. © 1979.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT