R.W. Keyes
Solid State Electronics
It is proposed that the valence band of amorphous phases includes a component of antibonding wave functions. A quantitative model of the effects of the antibonding admixture is successful in accounting for published experiments on the dielectric constant of germanium films. © 1975.
R.W. Keyes
Solid State Electronics
R.W. Keyes
International Symposium on Methods and Materials in Microelectronic Technology 1982
R.W. Keyes
Applied Physics A: Materials Science and Processing
R.W. Keyes
Proceedings of the IEEE