G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
An energetically favourable atomic modelling scheme for homogeneous nucleation of dislocations in silicon by condensation of point defects is described. For extrinsic dislocation dipoles, a chain of interstitial atoms is used to form intermediate defect configurations having non-six-membered atomic rings with matrix atoms. For intrinsic dislocation dipoles, a chain of matrix atoms is cut out and the remaining atoms surrounding the cut are used to form intermediate defect configurations having non-six-membered atomic rings. Climb and glide motions of the intermediate defect configurations then produce the 90° edge, the 60° and the Frank partial dislocation dipoles. The intermediate defect configurations and the dislocation dipoles generated have {110} rod-like morphologies. A model with all four-coordinated interstitial atoms for {113} stacking fault is also obtained. © 1981 U.S. Government.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
T. Schneider, E. Stoll
Physical Review B