Robert W. Keyes
Physical Review B
An energetically favourable atomic modelling scheme for homogeneous nucleation of dislocations in silicon by condensation of point defects is described. For extrinsic dislocation dipoles, a chain of interstitial atoms is used to form intermediate defect configurations having non-six-membered atomic rings with matrix atoms. For intrinsic dislocation dipoles, a chain of matrix atoms is cut out and the remaining atoms surrounding the cut are used to form intermediate defect configurations having non-six-membered atomic rings. Climb and glide motions of the intermediate defect configurations then produce the 90° edge, the 60° and the Frank partial dislocation dipoles. The intermediate defect configurations and the dislocation dipoles generated have {110} rod-like morphologies. A model with all four-coordinated interstitial atoms for {113} stacking fault is also obtained. © 1981 U.S. Government.
Robert W. Keyes
Physical Review B
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
P. Alnot, D.J. Auerbach, et al.
Surface Science