Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Atomically-resolved cross-sectional topographic images of AlGaAs/GaAs multilayers, which includes a sequence of 1, 2, 5, and 10 nm AlGaAs and GaAs layers, have been made using a scanning tunneling microscope. All the layers appear distinct and the dimensions of the as-grown layers can be accurately measured. Furthermore, alloy fluctuations and interface roughness over 2 nm length scales and ordering along certain directions are clearly observed. © 1993.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.C. Marinace
JES