Revanth Kodoru, Atanu Saha, et al.
arXiv
On GaAs (111) facets grown by a slider-free LPE technique, atomically flat areas and growth steps 6.5 Å high have been verified by the novel scanning tunneling microscopy. Nomarski interference contrast micrographs give a mean distance of the steps of 6 μm. These extremely flat and structurally perfect surfaces are thus nearly free of steps in contrast to surfaces and facets previously prepared. © 1982.
Revanth Kodoru, Atanu Saha, et al.
arXiv
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
R.W. Gammon, E. Courtens, et al.
Physical Review B