Michiel Sprik
Journal of Physics Condensed Matter
On GaAs (111) facets grown by a slider-free LPE technique, atomically flat areas and growth steps 6.5 Å high have been verified by the novel scanning tunneling microscopy. Nomarski interference contrast micrographs give a mean distance of the steps of 6 μm. These extremely flat and structurally perfect surfaces are thus nearly free of steps in contrast to surfaces and facets previously prepared. © 1982.
Michiel Sprik
Journal of Physics Condensed Matter
J.C. Marinace
JES
K.N. Tu
Materials Science and Engineering: A
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT