J.C. Marinace
JES
Paper
Atomically flat LPE-grown facets seen by scanning tunneling microscopy
Abstract
On GaAs (111) facets grown by a slider-free LPE technique, atomically flat areas and growth steps 6.5 Å high have been verified by the novel scanning tunneling microscopy. Nomarski interference contrast micrographs give a mean distance of the steps of 6 μm. These extremely flat and structurally perfect surfaces are thus nearly free of steps in contrast to surfaces and facets previously prepared. © 1982.
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