P. Solomon, D.J. Dimaria
Journal of Applied Physics
The infrared absorption of Si-rich SiO2 films has been measured using the attenuated total reflection technique. Absorption lines attributed to SiOH, H2O, and SiH groups have been observed in the as-deposited films. The concentrations of the SiOH and H2O impurities were found to be in the low 1021 cm-3 range, and the concentration of the SiH impurity was found to be 1018 cm-3. Following a 1000 C anneal 1019 cm-3 and 1016 cm -3 ranges, respectively.
P. Solomon, D.J. Dimaria
Journal of Applied Physics
J.M. Eldridge, D.W. Dong
Surface Science
D.J. Dimaria, D.W. Dong
Applied Physics Letters
D.J. Dimaria, E. Cartier, et al.
MRS Proceedings 1992