Stefan K. C. Lai, D.J. Dimaria, et al.
IEEE T-ED
The infrared absorption of Si-rich SiO2 films has been measured using the attenuated total reflection technique. Absorption lines attributed to SiOH, H2O, and SiH groups have been observed in the as-deposited films. The concentrations of the SiOH and H2O impurities were found to be in the low 1021 cm-3 range, and the concentration of the SiH impurity was found to be 1018 cm-3. Following a 1000 C anneal 1019 cm-3 and 1016 cm -3 ranges, respectively.
Stefan K. C. Lai, D.J. Dimaria, et al.
IEEE T-ED
D.J. Dimaria
Solid-State Electronics
A. Hartstein, J.C. Tsang, et al.
Applied Physics Letters
A. Hartstein, Thomas R. Puzak
ISCA 2002