Corey Liam Lammie, Hadjer Benmeziane, et al.
Nat. Rev. Electr. Eng.
Memristors are a vital element in many proposed neuromorphic computing architectures, and different learning algorithms have different hardware requirements regarding the on/off ratio and memory time constants of individual memristive elements.1 In this work, low-strain barium titanate (BTO) films are used in memristive ferroelectric field effect transistors (FeFETs), with the goal of precisely controlling these factors. Under low-strain conditions, BTO thin films, with broken interfacial symmetry and alternating a/c domains, have been shown to display strong, anisotropic ferroelectric response as well as a large dielectric constant of over 4000.2 By growing these films using Ti- or Y- doped SrSnO3 on SrTiO3, the strain in these films can be controlled. In FeFETS, the orientation and strain in the BTO layer produces a variety of responses in the conduction channel, allowing for tuning of memristive behavior.
Corey Liam Lammie, Hadjer Benmeziane, et al.
Nat. Rev. Electr. Eng.
Samuele Ruffino, Kumudu Geethan Karunaratne, et al.
DATE 2024
Sidney Tsai
MRS Fall Meeting 2023
Olivier Maher, N. Harnack, et al.
DRC 2023