Low-current spin transfer torque MRAM
Guohan Hu, J. J. Nowak, et al.
VLSI-TSA 2017
Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to follow a “cross-normalization” relationship between the parallel and antiparallel alignments. This we show originates from the leading order spin-flip scatter terms related to CoFeB interface magnetic properties such as its exchange-stiffness. By connecting the observable gV slopes to electrode-specific spin-flip scatter rates, we obtain an efficient measurement for mass-screening of junctions for interface magnetic differences. This provides valuable information for device and fabrication process optimization.
Guohan Hu, J. J. Nowak, et al.
VLSI-TSA 2017
M. Lavanant, P. Vallobra, et al.
Physical Review Applied
Christopher Safranski, Jan Kaiser, et al.
Nano Letters
J. Cucchiara, Eric E. Fullerton, et al.
Physical Review B - CMMP