Yan Zhou, Johan Åkerman, et al.
Applied Physics Letters
Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV to follow a “cross-normalization” relationship between the parallel and antiparallel alignments. This we show originates from the leading order spin-flip scatter terms related to CoFeB interface magnetic properties such as its exchange-stiffness. By connecting the observable gV slopes to electrode-specific spin-flip scatter rates, we obtain an efficient measurement for mass-screening of junctions for interface magnetic differences. This provides valuable information for device and fabrication process optimization.
Yan Zhou, Johan Åkerman, et al.
Applied Physics Letters
Guohan Hu, J. J. Nowak, et al.
VLSI-DAT 2017
Guohan Hu, M. G. Gottwald, et al.
IEDM 2017
Guohan Hu, J. J. Nowak, et al.
VLSI-TSA 2017