Bistable switching in metal-semiconductor junctions

Abstract

Bistable switching with memory has been achieved in various n-type GaAs Schottky contacts and n-type Si Schottky contacts doped with trap impurities. Transition from the low-conductivity state into a high-conductivity state is established after a delay of 10 nsec, when a threshold voltage is exceeded. With opposite bias direction, resetting occurs in 10 nsec by exceeding a current threshold. Either state is maintained over weeks without bias. © 1972 The American Institute of Physics.