John G. Long, Peter C. Searson, et al.
JES
A LEED (low-energy electron diffraction) intensity analysis of C {111} 1 × 1 (diamond) has given good agreement with a surface structure which has bulk positions with small relaxation of the first interlayer spacing for both insulating and semiconducting specimens. The truncated-bulk character of C{111} 1 × 1 gives support to the previously determined bulk-like structure of stabilized Si{111} 1 × 1, and casts doubt on the disordered 7 × 7 structure suggested for the stabilized 1 × 1 phase by interpretation of photoemission measurements. In both cases rather than doubt the LEED structure, one can doubt the interpretation of the photoemission measurements. © 1982.
John G. Long, Peter C. Searson, et al.
JES
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
R. Ghez, J.S. Lew
Journal of Crystal Growth
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APS Global Physics Summit 2025