H.D. Dulman, R.H. Pantell, et al.
Physical Review B
A LEED (low-energy electron diffraction) intensity analysis of C {111} 1 × 1 (diamond) has given good agreement with a surface structure which has bulk positions with small relaxation of the first interlayer spacing for both insulating and semiconducting specimens. The truncated-bulk character of C{111} 1 × 1 gives support to the previously determined bulk-like structure of stabilized Si{111} 1 × 1, and casts doubt on the disordered 7 × 7 structure suggested for the stabilized 1 × 1 phase by interpretation of photoemission measurements. In both cases rather than doubt the LEED structure, one can doubt the interpretation of the photoemission measurements. © 1982.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films