Conference paper
A high performance 0.15 μm CMOS
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993
Hole trapping in thermally grown silicon-dioxide films has been studied using optically induced hot-hole injection in p-channel polysilicon-SiO 2-silicon field-effect-transistor structures. Analysis of the data assuming a uniform trap distribution and no detrapping gives 3.1×10 -13 cm2 and 1.4×1018 cm-3 for the capture cross section and the trap concentration, respectively. Initial hole-trapping efficiency is almost 99% for a 1000-Å SiO2 film.
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993
T.H. Ning
MRS Spring Meeting 1996
B. Chen, A.S. Yapsir, et al.
ICSICT 1995
T.H. Ning
Journal of Applied Physics