Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
We present experimental results on single-wall carbon nanotube field-effect transistors (CNFETs) operating at gate and drain voltages below 1 V. Taking into account the extremely small diameter of the semiconducting tubes used as active components, electrical characteristics are comparable with state-of-the-art metal oxide semiconductor field-effect transistors (MOSFETs). While output as well as subthreshold characteristics resemble those of conventional MOSFETs, we find that CNFET operation is actually controlled by Schottky barriers (SBs) in the source and drain region instead of by the nanotube itself. Due to the small size of the contact region between the electrode and the nanotube, these barriers can be extremely thin, enabling good performance of SB-CNFETs. © 2002 IEEE.
Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
Nanda Kambhatla
ACL 2004
Minkyong Kim, Zhen Liu, et al.
INFOCOM 2008
Alfonso P. Cardenas, Larry F. Bowman, et al.
ACM Annual Conference 1975