Shu-Jen Han, Satoshi Oida, et al.
IEDM 2013
Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity. © 2011 American Institute of Physics.
Shu-Jen Han, Satoshi Oida, et al.
IEDM 2013
Zhaoying Hu, Jose Miguel M. Lobez Comeras, et al.
Nature Nanotechnology
Hongsik Park, Ali Afzali, et al.
Nature Nanotechnology
Can Bayram, Jeehwan Kim, et al.
IPC 2017