CHANNELING OF IONS NEAR THE SILICON less than 001 greater than AXIS.

Abstract

The first experimental mapping of the ion beam channels near the Si LT AN BR 001 RT AN BR axis is reported. Remarkably fine structure is observed, with over thirty microchannels identified within 20 degrees of the Si LT AN BR 001 RT AN BR axis. Each map is made from about 16000 channeling spectra with each channeling probability becoming a pixel of information in the final plot. Contour maps have been constructed for ions of He and N with energies from 50 to 2000 keV. All features are identified by theoretical lots of silicon planar channels and axial channels.