L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
The growth of superconducting oxides in vacuum conditions compatible with molecular beam epitaxy (MBE) requires a form of activated oxygen. The activated oxygen species can be either atomic oxygen (O) or ozone (03). Here we characterize a rf plasma source by measuring the oxidation rate of a silver film on a quartz crystal deposition monitor as a function of the oxygen flow. The initial oxidation rate provides a lower limit for the actual atomic oxygen flux. If the frequency change of the quartz signal is entirely due to the oxidation of silver by atomic oxygen and we assume a detection efficiency of one, then the total cracking efficiency of the source is. estimated to be around 30%. The source was used in a MBE machine to deposit thin (200 A) high-rcfilms of DyBa2Cu307 on SrTiQ3with a 7nsetof 88 K and a rfr0of 86 K. © 1992, American Vacuum Society. All rights reserved.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
David B. Mitzi
Journal of Materials Chemistry
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007