Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We study charge control in a gated 4,4′-biphenyl diradical molecular transistor using ab initio density functional theory calculations. I-V curves and intrinsic gate capacitances were derived. We find charge control in this transistor to be strongly affected by polarization of the σ-states of the molecule, leading to strong electrostatic coupling of the internal potentials to the source and drain electrodes, and relatively weak coupling to the gate. We suggest that this spatially dependent and anisotropic polarization is an essential element in the operation of molecular transistors. © 2005 American Chemical Society.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J. Tersoff
Applied Surface Science
Robert W. Keyes
Physical Review B
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry