Sung Ho Kim, Oun-Ho Park, et al.
Small
We study charge control in a gated 4,4′-biphenyl diradical molecular transistor using ab initio density functional theory calculations. I-V curves and intrinsic gate capacitances were derived. We find charge control in this transistor to be strongly affected by polarization of the σ-states of the molecule, leading to strong electrostatic coupling of the internal potentials to the source and drain electrodes, and relatively weak coupling to the gate. We suggest that this spatially dependent and anisotropic polarization is an essential element in the operation of molecular transistors. © 2005 American Chemical Society.
Sung Ho Kim, Oun-Ho Park, et al.
Small
David B. Mitzi
Journal of Materials Chemistry
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP