Sufi Zafar, Hemanth Jagannathan, et al.
Applied Physics Letters
The charge trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors were discussed. A model similar to SiO2 charge trapping models, was developed for the trapping of charges in the existing traps. The threshold voltage shifts were calculated as a function of stress time.
Sufi Zafar, Hemanth Jagannathan, et al.
Applied Physics Letters
Sufi Zafar, Alessandro Callegari, et al.
IEDM 2002
Shriram Ramanathan, Paul C. McIntyre, et al.
Applied Physics Letters
Alessandro Callegari, Katherina Babich, et al.
SPIE Advanced Lithography 1998