Hiroaki Arimura, Stephen L. Brown, et al.
IEEE Electron Device Letters
Paper
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
Abstract
The charge trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors were discussed. A model similar to SiO2 charge trapping models, was developed for the trapping of charges in the existing traps. The threshold voltage shifts were calculated as a function of stress time.
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