Sufi Zafar, A.C. Callegari, et al.
Applied Physics Letters
The charge trapping related threshold voltage shifts in Al2O3 and HfO2 n-type field effect transistors were discussed. A model similar to SiO2 charge trapping models, was developed for the trapping of charges in the existing traps. The threshold voltage shifts were calculated as a function of stress time.
Sufi Zafar, A.C. Callegari, et al.
Applied Physics Letters
Min Yang, Victor W.C. Chan, et al.
IEEE Transactions on Electron Devices
Sufi Zafar, A. Kerber, et al.
VLSI Technology 2014
Sufi Zafar, Minhua Lu, et al.
Scientific Reports