Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Hiroshi Ito, Reinhold Schwalm
JES
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011