William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
We report high-speed planar silicon p-i-n photodiodes fabricated on Silicon-on-Insulator (SOI) substrates. The devices were fabricated in standard CMOS technology with no additional fabrication steps required. The 250-nm finger-spacing devices exhibited 15- and 8-GHz bandwidths for devices processed on 200- and 2000-nm SOI substrates, respectively, at a reverse bias of -9 V. Quantum efficiencies of 12% and 2% were measured on the 2- and 0.2-μm thick SOI, respectively. The dark current was 5 pA for -3 V bias and 500 μA for -9 V bias.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology