Solomon Assefa, Fengnian Xia, et al.
OFC 2010
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Solomon Assefa, Fengnian Xia, et al.
OFC 2010
Fengnian Xia, Thomas Mueller, et al.
CLEO/QELS 2010
Jun Rong Ong, William M. J. Green, et al.
Proceedings of SPIE - The International Society for Optical Engineering 2012
Solomon Assefa, Fengnian Xia, et al.
ECS Transactions