J.R. Childress, M.K. Ho, et al.
INTERMAG 2002
We report on the advantages of employing insulating Co-oxide underlayers for spin valves utilizing Co-ferrite as a pinning layer. These underlayers provide for improved crystalline growth of Co-ferrite pinning layers, which can be reduced to as little as 3 nm in thickness while maintaining high coercivity and thermal stability. This allows a typical antiferromagnetically pinned spin valve to fit into a 50 nm gap, which is anticipated for recording densities >100 Gbit/in2. Magnetoresistance values ∼7%, excellent stability, and free layer properties are observed and pinned which is comparable to present PtMn based sensors of similar thickness. © 2002 American Institute of Physics.
J.R. Childress, M.K. Ho, et al.
INTERMAG 2002
Eric E. Fullerton, O. Hellwig, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
O. Hellwig, O. Hellwig, et al.
Physical Review B - CMMP
C.L. Platt, A.E. Berkowitz, et al.
Applied Physics Letters