W.-Y. Lee, M. Toney, et al.
IEEE Transactions on Magnetics
We report on the advantages of employing insulating Co-oxide underlayers for spin valves utilizing Co-ferrite as a pinning layer. These underlayers provide for improved crystalline growth of Co-ferrite pinning layers, which can be reduced to as little as 3 nm in thickness while maintaining high coercivity and thermal stability. This allows a typical antiferromagnetically pinned spin valve to fit into a 50 nm gap, which is anticipated for recording densities >100 Gbit/in2. Magnetoresistance values ∼7%, excellent stability, and free layer properties are observed and pinned which is comparable to present PtMn based sensors of similar thickness. © 2002 American Institute of Physics.
W.-Y. Lee, M. Toney, et al.
IEEE Transactions on Magnetics
Andreas Moser, David T. Margulies, et al.
Physical Review B - CMMP
M.J. Carey, S. Maat, et al.
Applied Physics Letters
Andreas Moser, Kentaro Takano, et al.
Journal of Physics D: Applied Physics