O. Hellwig, S. Maat, et al.
Physical Review B - CMMP
We report on the advantages of employing insulating Co-oxide underlayers for spin valves utilizing Co-ferrite as a pinning layer. These underlayers provide for improved crystalline growth of Co-ferrite pinning layers, which can be reduced to as little as 3 nm in thickness while maintaining high coercivity and thermal stability. This allows a typical antiferromagnetically pinned spin valve to fit into a 50 nm gap, which is anticipated for recording densities >100 Gbit/in2. Magnetoresistance values ∼7%, excellent stability, and free layer properties are observed and pinned which is comparable to present PtMn based sensors of similar thickness. © 2002 American Institute of Physics.
O. Hellwig, S. Maat, et al.
Physical Review B - CMMP
L. Folks, R.E. Fontana, et al.
Journal of Physics D: Applied Physics
R. Zivieri, P. Vavassori, et al.
Physical Review B - CMMP
H. Liu, D. Bedau, et al.
J Magn Magn Mater