Comment on Correlation between process-induced in-plane distortion and wafer bowing in silicon

Abstract

The paper by L. D. Yau incorrectly reports and discusses results reported by Gegenwarth and Laming [SPIE. J. 100, 66 (1977)]. The observed in-plane distortions in that paper were similar in magnitude to those found by Yau. Most of the data in three different types of experiments showed in-plane distortion in the range of 1/8 to 3/8 μm.