Comment on &quot;Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy&quot; (Journal of Applied Physics (1985) 57 (249))

I.C. Noyan; Armin Segmüller

doi:10.1063/1.337772

Journal of Applied Physics

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01 Dec 1986

Comment on "Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy" (Journal of Applied Physics (1985) 57 (249))

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Abstract

The proper elastic equations for an epitaxial bilayer system are presented, amending an earlier paper published by other authors in this journal. The stress profile normal to the surface and the radius of curvature are given as functions of the epitaxial mismatch.

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