E. Burstein
Ferroelectrics
We have described a model-based methodology for evaluating the floating body advantage of pd SOI in the context of a reference condition where the bulk model, with all components of Cj = 0, has the same values of Rsw and Ct as the corresponding SOI model, with all values of Cj = 0 and its bodies tied to their ip values. An example case shows a net advantage of order 10% that can be uniquely attributed to SOI's floating body topology. This advantage is a sensitive function of the internal SOI diffusion capacitance with considerable opportunity for further improvement.
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Toshiaki Kirihata
VLSI-TSA 2003
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011