W. Baechtold, K. Daetwyler, et al.
Electronics Letters
The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 um gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 um. © 1972, The Institution of Electrical Engineers. All rights reserved.
W. Baechtold, K. Daetwyler, et al.
Electronics Letters
P. Wolf, B.J. Van Zeghbroeck, et al.
IEEE Transactions on Magnetics
R.F. Broom, P. Gueret, et al.
ISSCC 1978
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1986