Richard E. Harris, P. Wolf, et al.
IEEE Electron Device Letters
The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 um gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 um. © 1972, The Institution of Electrical Engineers. All rights reserved.
Richard E. Harris, P. Wolf, et al.
IEEE Electron Device Letters
P. Guéret, M. Reiser
Applied Physics Letters
E.O. Schulz-DuBois, P. Wolf
Applied Physics
R.F. Broom, P. Gueret, et al.
ISSCC 1978