P. Guéret, Th. O Mohr, et al.
IEEE Transactions on Magnetics
The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 um gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 um. © 1972, The Institution of Electrical Engineers. All rights reserved.
P. Guéret, Th. O Mohr, et al.
IEEE Transactions on Magnetics
M. Reiser
Electronics Letters
Richard E. Harris, P. Wolf, et al.
IEEE Electron Device Letters
M. Reiser, S.S. Lavenberg
Journal of the ACM