P. Buchmann, H. Kaufmann, et al.
SPIE International Technical Symposium/Europe 1985
The conductance distributions of very small-area alloyed ohmic contacts on n+-GaAs have been studied as a function of lateral contact size d, with d ranging from 4 μm down to 0.3 μm. The data are fairly well represented by a Poisson distribution, which takes into account the granularity of the alloyed contacts, as previously reported. We deduce an average distance of dc ≃0.41 μm between conducting grains and a dead zone of ld ≃600 Å due to dry etching of the GaAs.
P. Buchmann, H. Kaufmann, et al.
SPIE International Technical Symposium/Europe 1985
A. Herkersdorf, P. Buchmann, et al.
International Zurich Seminar on Broadband Communications 2000
J. Faist, P. Guéret, et al.
Physical Review B
E. Marclay, D.J. Webb, et al.
Applied Surface Science