P. Unger, V. Boegli, et al.
Microelectronic Engineering
The conductance distributions of very small-area alloyed ohmic contacts on n+-GaAs have been studied as a function of lateral contact size d, with d ranging from 4 μm down to 0.3 μm. The data are fairly well represented by a Poisson distribution, which takes into account the granularity of the alloyed contacts, as previously reported. We deduce an average distance of dc ≃0.41 μm between conducting grains and a dead zone of ld ≃600 Å due to dry etching of the GaAs.
P. Unger, V. Boegli, et al.
Microelectronic Engineering
F.R. Gfeller, P. Buchmann, et al.
Journal of Applied Physics
E. Marclay, D.J. Webb, et al.
Applied Physics Letters
K. Jackson, Ch. Harder, et al.
IEEE Photonics Technology Letters