Patterning of highly conducting polyaniline films
T. Graham, A. Afzali, et al.
Microlithography 2000
Polyaniline is shown to be a high resolution conducting resist with the use of onium salts. Upon exposure to ultra-violet radiation or to an e-beam, the onium salts decompose to generate protonic acids which in turn dope the polyaniline. A solubility difference is created between the unexposed (undoped) and exposed (doped) regions resulting in patterns of conducting lines. 0.25 μm lines were attained with e-beam irradiation. Polyaniline was also shown to be an effective discharge layer for e-beam lithography. Zero pattern displacements are observed when polyaniline is used as a thin coating below the imaging resist whereas, greater than 5 μm displacements are observed in the absence of a conducting coating. In addition, polyaniline was shown to eliminate charging during the high resolution SEM inspection and dimensional measurements of x-ray and optical masks when a thin film is spin-coated on the mask. In contrast to the commonly used metal deposition techniques, the polyaniline can be easily and completely removed without any damage to the mask.
T. Graham, A. Afzali, et al.
Microlithography 2000
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Y. Pastol, G. Arjavalingam, et al.
Synthetic Metals
Kam-Leung Lee, C.H. Schaefer, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures