E.A. Stachf, R. Hull, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Paper
Control of homoepitaxial Si nanostructures by locally modified surface reactivity
Abstract
We describe a technique for the homoepitaxial growth of epitaxial, faceted Si islands on Si(001), consisting of predeposition of Ga surfactant followed by ultrahigh vacuum chemical vapor deposition (CVD) of Si. Ga-mediated Si CVD leads to the formation of Si islands exhibiting {113} and {102} facets. Surfactant-mediated CVD is shown to provide a new degree of freedom for the production of nanoscale structures without lithography. © 2008 American Institute of Physics.
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