R. Ludeke, H.J. Wen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Core-level photoemission studies of MBE-grown semiconductor surfaces
Abstract
The photoemission spectra of Ga3d, As3d and Sb4d core levels reveal a rich surface-derived substructure which is due to changes in the surface bonding environment and indicates one or more surface bonding sites per surface atom. Bulk and surface contributions have been separated and used to determine the stoichiometry of several GaAs(100) surfaces. © 1983.
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