Michiel Sprik
Journal of Physics Condensed Matter
Electrical breakdown in GaAs Schottky diodes creates a granular filamentary structure of submicron dimensions between the contacts. The filament exhibits very fast (<2 nsec) electrical switching between stable resistance states. Irrespective of the contact metal, the filament becomes superconducting when in the low-resistance state. Electron transport in all the resistance states is intergrain tunneling between metallic inclusions and is governed by an activation energy. Switching is not based on metal transport. © 1975.
Michiel Sprik
Journal of Physics Condensed Matter
R. Ghez, M.B. Small
JES
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Ming L. Yu
Physical Review B