Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Paper
De Haas-Van Alphen effect in silicon inversion layers
Abstract
The dHvA effect was observed in a Si inversion layer by a modulation technique for constant magnetic field up to 15 T. The expected periodic spikes in dM dn between Landau levels were discerned. However, the predicted quantum plateaus with step of h {combining short stroke overlay}e m*c are not yet observed. © 1984.
Related
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010