E. Gusev, C. Cabral Jr., et al.
Microelectronic Engineering
Paper
Decomposition of interfacial SiO2 during HfO2 deposition
Abstract
The removal of interfacial silicon dioxide due to the growth of HfO 2 by Hf deposition in an oxidizing ambient was investigated. The involvement of oxygen transport through HfO2 layer was shown by medium-energy ion scattering results. Oxygen vacancy reactions were held responsible for the temperature dependence of silica reduction.
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