Applied Physics Letters

Paper

20 Oct 2003

Decomposition of interfacial SiO₂ during HfO₂ deposition

View publication

Abstract

The removal of interfacial silicon dioxide due to the growth of HfO 2 by Hf deposition in an oxidizing ambient was investigated. The involvement of oxygen transport through HfO2 layer was shown by medium-energy ion scattering results. Oxygen vacancy reactions were held responsible for the temperature dependence of silica reduction.

Paper

New insights into the nanowire nucleation and growth kinetics

S. Kodambaka, J. Tersoff, et al.

Microscopy and Microanalysis

Paper

Stoichiometry reversal and depth-profiling in the growth of thin oxynitride films with N₂O on Si(100) surfaces

D.G.J. Sutherland, H. Akatsu, et al.

Journal of Electron Spectroscopy and Related Phenomena

Conference paper

Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes

R. Jammy, V. Narayanan, et al.

ISTC 2005

Paper

In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si (001) heterostructures

E.A. Stachf, R. Hull, et al.

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

View all publications