J.F. Holzrichter, R.M. Macfarlane, et al.
Physical Review Letters
We report the use of a sensitive spectrometer system for studying sharp optical absorption lines that are dueto transitions between 4f3 crystal-field levels of Nd3+ in epitaxial NdF3 films. Films as thin as 50 Å on GaAs substrates displayed absorption lines with asymmetric line shapes. Samples with an antireflecting LaF2 buffer between the NdF3 layer and the substrate permitted observation ofabsorption lines in thinner films. © 1991 Optical Society of America.
J.F. Holzrichter, R.M. Macfarlane, et al.
Physical Review Letters
G.P. Flinn, K.W. Jang, et al.
Journal of Luminescence
M.L. Jones, D.W. Shortt, et al.
Physical Review B
G.P. Flinn, K.W. Jang, et al.
Physical Review B