E. Burstein
Ferroelectrics
Tunneling spectroscopy and voltage-dependent scanning tunneling microscopy have been used to study the geometry and electronic properties of atomic-sized defects on the Si (001) surface. Individual dimer vacancies are shown to be semiconducting, consistent with the π-bonded defect model of Pandey. Another type of characteristic defect is found which gives rise to strongly metallic tunneling I-V characteristics, demonstrating that it has a high density of states at the Fermi level and is likely active in Fermi level pinning on Si (001). Spatially dependent I-V measurements and tunneling barrier height measurements also directly reveal the spatial extent of this metallic character and provide direct measures of the “size” of the defects. © 1989, American Vacuum Society. All rights reserved.
E. Burstein
Ferroelectrics
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering