Difference methods for the solution of the time-dependent semiconductor flow equations

Abstract

The letter describes the solution of the instationary semiconductor transport equations by means of finite-difference methods. This new approach is based on the formal similarity with the equations of incompressible flow. Implicit schemes have proven useful for the computation of both transient and steady-state solutions. Comparisons with experimental results are extremely favourable for f.e.t.s. © 1971, The Institution of Electrical Engineers. All rights reserved.