Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ta thin films were grown by PE ALD on Si surfaces and the diffusion barrier properties of ALD Ta were measured by three in situ techniques. The ALD Ta films have 70-100°C higher failure temperatures in the 2-25 nm thickness region compared to PVD Ta films. This enhancement of failure temperature for ALD Ta was more prominent for the thinner films.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ming L. Yu
Physical Review B
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
R.W. Gammon, E. Courtens, et al.
Physical Review B