Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Ta thin films were grown by PE ALD on Si surfaces and the diffusion barrier properties of ALD Ta were measured by three in situ techniques. The ALD Ta films have 70-100°C higher failure temperatures in the 2-25 nm thickness region compared to PVD Ta films. This enhancement of failure temperature for ALD Ta was more prominent for the thinner films.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
R. Ghez, J.S. Lew
Journal of Crystal Growth